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1

Three-Dimensional Basin and Petroleum System Model of the Cretaceous Burgan Formation, Kuwait: Model-in-Model, High-Resolution Charge Modeling

Derks, Jan Frederik, Fuchs, Thomas, Kauerauf, Armin, Al-quattan, Meshari

Journal:

HED4: Basin Modeling: New Horizons in Research and Applications

Year:

2012

Language:

english

File:

PDF, 3.42 MB

english, 2012

2

[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Reliability-Aware FinFET Design

Toledano-Luque, M., Paliwoda, P. Srinivasan. P., Cimino, S., Chbili, Z., Mahmud, M. Iqbal, Gupta, A., Shen, T., Kauerauf, T., Zhu, B., Min, B., Nigam, T.

Year:

2019

Language:

english

File:

PDF, 265 KB

english, 2019

3

Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Larry Zhao, Melina Lofrano, Kristof Croes, Els Van Besien, Zsolt Tőkei, Christopher J. Wilson, Robin Degraeve, Thomas Kauerauf, Gerald P. Beyer, Cor Claeys

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

4

A smooth transition from serial to parallel processing in the industrial petroleum system modeling package PetroMod

H. Martin Bücker, Armin I. Kauerauf, Arno Rasch

Journal:

Computers & Geosciences

Year:

2008

Language:

english

File:

PDF, 654 KB

english, 2008

5

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

Amat, E., Kauerauf, T., Degraeve, R., De Keersgieter, A., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

6

[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Review of reliability issues in high-k/metal gate stacks

Degraeve, R., Aoulaiche, M., Kaczer, B., Roussel, Ph., Kauerauf, T., Sahhaf, S., Groeseneken, G.

Year:

2008

Language:

english

File:

PDF, 360 KB

english, 2008

7

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

Amat, Esteve, Kauerauf, Thomas, Degraeve, Robin, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 363 KB

english, 2011

8

Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)

Kin Leong Pey, Nagarajan Raghavan, Xing Wu, Wenhu Liu, Xiang Li, Michel Bosman, Kalya Shubhakar, Zin Zar Lwin, Yining Chen, Hailang Qin, Thomas Kauerauf

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 2.19 MB

english, 2011

9

Reliability of thin ZrO2 gate dielectric layers

Robert O’Connor, Greg Hughes, Thomas Kauerauf, Lars-Ake Ragnarsson

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 471 KB

english, 2011

10

Three-dimensional modeling of equiaxed dendritic growth on a mesoscopic scale

I. Steinbach, C. Beckermann, B. Kauerauf, Q. Li, J. Guo

Journal:

Acta Materialia

Year:

1999

Language:

english

File:

PDF, 1.32 MB

english, 1999

11

Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes

Kerber, A., Cartier, E., Degraeve, R., Roussel, P.J., Pantisano, L., Kauerauf, T., Groeseneken, G., Maes, H.E., Schwalke, U.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 695 KB

english, 2003

12

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Feijoo, Pedro C., Kauerauf, Thomas, Toledano-Luque, MarÃa, Togo, Mitsuhiro, San Andres, Enrique, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2012

Language:

english

File:

PDF, 609 KB

english, 2012

13

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

Ritzenthaler, Romain, Schram, Tom, Spessot, Alessio, Caillat, Christian, Aoulaiche, Marc, Cho, Moon Ju, Noh, Kyoung Bong, Son, Yunik, Na, Hoon Joo, Kauerauf, Thomas, Douhard, Bastien, Nazir, Aftab, Ch

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.26 MB

english, 2014

14

[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: Challenges and solutions

Groeseneken, G., Aoulaiche, M., Cho, M., Franco, J., Kaczer, B., Kauerauf, T., Mitard, J., Ragnarsson, Lars-Ake, Roussel, P., Toledano-Luque, M.

Year:

2013

File:

PDF, 1.02 MB

2013

15

Competing Degradation Mechanisms in Short-Channel Transistors Under Channel Hot-Carrier Stress at Elevated Temperatures

Amat, E., Kauerauf, T., Degraeve, R., Rodriguez, R., Nafria, M., Aymerich, X., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 263 KB

english, 2009

16

Influence of Stress-Induced Leakage Current on Reliability of $\hbox{HfSiO}_{x}$

Jakschik, Stefan, Kauerauf, Thomas, Degraeve, R., Hwang, Y. N., Duschl, Rainer, Kerber, Martin, Avellan, Alejandro, Kudelka, S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 444 KB

english, 2007

17

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability

Tang, B.J., Croes, K., Barbarin, Y., Wang, Y.Q., Degraeve, R., Li, Y., Toledano-Luque, M., Kauerauf, T., Bömmels, J., Tőkei, Zs., De Wolf, I.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 687 KB

english, 2014

18

[IEEE Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 - Taiwan (5-8 July 2004)] Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743) - Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Groeseneken, G., Pantisano, L., Ragnarsson, L.-A., Degraeve, R., Houssa, M., Kauerauf, T., Roussel, P., De Gendt, S., Heyns, M.

Year:

2004

Language:

english

File:

PDF, 664 KB

english, 2004

19

Improved Channel Hot-Carrier Reliability in $p$-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Cho, Moonju, Arimura, Hiroaki, Lee, Jae Woo, Kaczer, Ben, Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2014

Language:

english

File:

PDF, 992 KB

english, 2014

20

Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs

O'Connor, Robert, Hughes, Greg, Kauerauf, Thomas

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2011

Language:

english

File:

PDF, 630 KB

english, 2011

21

[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Reliability concerns in copper TSV's: Methods and results

Croes, Kristof, Cherman, Vladimir O., Li, Yunlong, Zhao, Larry, Barbarin, Yohan, De Messemaeker, Joke, Civale, Yann, Velenis, Dimitrios, Stucchi, Michele, Kauerauf, Thomas, Redolfi, Augusto, Dimcic, B

Year:

2012

Language:

english

File:

PDF, 332 KB

english, 2012

22

The finite element method with continuity constraints for stair-step grids in geoscience

Fries, T. P., Fücker, M., Kauerauf, A.

Journal:

Computational Geosciences

Year:

2014

Language:

english

File:

PDF, 5.82 MB

english, 2014

23

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization

Ragnarsson, L.-A., Li, Z., Tseng, J., Schram, T., Rohr, E., Cho, M. J., Kauerauf, T., Conard, T., Okuno, Y., Parvais, B., Absil, P., Biesemans, S., Hoffmann, T. Y.

Year:

2009

Language:

english

File:

PDF, 622 KB

english, 2009

24

[IEEE International Reliability Physics Symposium - Dallas, TX, USA (30 March-4 April 2003)] 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. - Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

Kerber, A., Cartier, E., Pantisano, L., Rosmeulen, M., Degraeve, R., Kauerauf, T., Groeseneken, G., Maes, H.E., Schwalke, U.

Year:

2003

Language:

english

File:

PDF, 329 KB

english, 2003

25

Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability

Moonju Cho,, Aoulaiche, Marc, Degraeve, Robin, Ortolland, Claude, Kauerauf, Thomas, Kaczer, Ben, Roussel, Philippe, Hoffmann, Thomas Y, Groeseneken, Guido

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 223 KB

english, 2010

26

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Towards the understanding of intrinsic degradation and breakdown mechanisms of a SiOCH low-k dielectric

Wu, C., Li, Y., Barbarin, Y., Ciofi, I., Tang, B., Kauerauf, T., Croes, K., Bommels, J., De Wolf, I., Tokei, Zs.

Year:

2014

Language:

english

File:

PDF, 1.36 MB

english, 2014

27

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Dual-channel technology with cap-free single metal gate for high performance CMOS in gate-first and gate-last integration

Witters, L., Mitard, J., Veloso, A., Hikavyy, A., Franco, J., Kauerauf, T., Cho, M., Schram, T., Sebai, F., Yamaguchi, S., Takeoka, S., Fukuda, M., Wang, W.-E., Duriez, B., Eneman, G., Loo, R., Kellen

Year:

2011

Language:

english

File:

PDF, 630 KB

english, 2011

28

Towards understanding intrinsic degradation and breakdown mechanisms in SiOCH low-k dielectrics

Wu, C., Ciofi, I., Kauerauf, Th., Bömmels, J., De Wolf, I., Tőkei, Zs., Croes, K.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.60 MB

english, 2015

29

[IEEE 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 - Taiwan (5-8 July 2004)] Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743) - Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Groeseneken, G., Pantisano, L., Ragnarsson, L.-A., Degraeve, R., Houssa, M., Kauerauf, T., Roussel, P., De Gendt, S., Heyns, M.

Year:

2004

File:

PDF, 7 KB

2004

30

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers

O'Connor, Robert, McDonnell, Stephen, Hughes, Greg, Degraeve, Robin, Kauerauf, Thomas

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 260 KB

english, 2005

31

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Investigation of hot carrier degradation in bulk FinFET

Chung, Eun-Ae, Nam, Kab-Jin, Nakanishi, Toshiro, Park, Sungil, Yang, Hongseon, Kauerauf, Thomas, Jiao, Guangfan, Kim, Dong-won, Hwang, Ki Hyun, Kim, Hyejin, Lee, Hyunwoo, Pae, Sangwoo

Year:

2017

Language:

english

File:

PDF, 649 KB

english, 2017

32

Proceedings [EAGE Publications BV Second Workshop on Exploration - Cairo, Egypt (2010.12.04-2010.12.07)] Second Workshop on Exploration - Petroleum Systems Modeling of the Haynesville Shale Gas Play

Mavridou, E., de Lind van Wijngaarden, M.C., Kauerauf, A.I., Hantschel, T., Kornpihl, K., Bryant, I.

Year:

2010

Language:

english

File:

PDF, 349 KB

english, 2010

33

Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2010

Language:

english

File:

PDF, 302 KB

english, 2010

34

HfO2/spacer-interface breakdown in HfO2 high-κ/poly-silicon gate stacks

R. Ranjan, K.L. Pey, C.H. Tung, L.J. Tang, B. Elattari, T. Kauerauf, G. Groeseneken, R. Degraeve, D.S. Ang, L.K. Bera

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 2.37 MB

english, 2005

35

Electron spectral density in a disordered system of hard sphere scatterers

B.U Felderhof, A Kauerauf

Journal:

Physica A: Statistical Mechanics and its Applications

Year:

1995

Language:

english

File:

PDF, 535 KB

english, 1995

36

Transient survival probability of a particle diffusing in a disordered system of perfectly absorbing spherical sinks

A. Kauerauf, B.U. Felderhof

Journal:

Physica A: Statistical Mechanics and its Applications

Year:

1996

Language:

english

File:

PDF, 1.25 MB

english, 1996

37

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 319 KB

english, 2010

38

Scaling CMOS: Finding the gate stack with the lowest leakage current

Thomas Kauerauf, Bogdan Govoreanu, Robin Degraeve, Guido Groeseneken, Herman Maes

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 328 KB

english, 2005

39

Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

A. Veloso, H.Y. Yu, A. Lauwers, S.Z. Chang, C. Adelmann, B. Onsia, M. Demand, S. Brus, C. Vrancken, R. Singanamalla, P. Lehnen, J. Kittl, T. Kauerauf, R. Vos, B.J. O′Sullivan, S. Van Elshocht, R. Mits

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 1001 KB

english, 2008

40

Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric

Moonju Cho, Marc Aoulaiche, Robin Degraeve, Ben Kaczer, Thomas Kauerauf, Lars-Åke Ragnarsson, Christoph Adelmann, Sven Van Elshocht, Thomas Y. Hoffmann, Guido Groeseneken

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 389 KB

english, 2011

41

Directional cellular growth of succinonitrile–0.075 wt% acetone bulk samples Part 2: Analysis of cellular pattern

Bernd Kauerauf, Gerhard Zimmermann, Stephan Rex, Bernard Billia, Haik Jamgotchian, John D. Hunt

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 474 KB

english, 2001

42

Directional cellular growth of succinonitrile–0.075 wt% acetone bulk samples: Part 1: Results of space experiments

Bernd Kauerauf, Gerhard Zimmermann, Stephan Rex, Michael Mathes, Frank Grote

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 1.28 MB

english, 2001

43

Planar to cellular transition in the system succinonitrile–acetone during directional solidification of a bulk sample

Bernd Kauerauf, Gerhard Zimmermann, Lydia Murmann, Stephan Rex

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 843 KB

english, 1998

44

Directional solidification of cellular arrays in a transparent organic alloy

S. Rex, B. Kauerauf, G. Zimmermann

Journal:

Advances in Space Research

Year:

2002

Language:

english

File:

PDF, 893 KB

english, 2002

45

Analysis of diffusive cellular patterns in directional solidification of bulk samples

Laszlo Sturz, Gerhard Zimmermann, Stephan Rex, Michael Mathes, Bernd Kauerauf

Journal:

Metallurgical and Materials Transactions A

Year:

2004

Language:

english

File:

PDF, 218 KB

english, 2004

46

Low Weibull slope of breakdown distributions in high-k layers

Kauerauf, T., Degraeve, R., Cartier, E., Soens, C., Groeseneken, G.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 189 KB

english, 2002

47

A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics

Crupi, F., Kauerauf, T., Degraeve, R., Pantisano, L., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 526 KB

english, 2005

48

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

Ragnarsson, L.-A., Severi, S., Trojman, L., Johnson, K.D., Brunco, D.P., Aoulaiche, M., Houssa, M., Kauerauf, T., Degraeve, R., Delabie, A., Kaushik, V.S., De Gendt, S., Tsai, W., Groeseneken, G., Kri

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 539 KB

english, 2006

49

Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited HfO2 Layers

Moonju Cho, Degraeve, R., Pourtois, G., Delabie, A., Ragnarsson, L.-A., Kauerauf, T., Groeseneken, G., De Gendt, S., Heyns, M., Cheol Seong Hwang

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 410 KB

english, 2007

50

A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out

Sahhaf, S., Degraeve, R., Roussel, P.J., Kaczer, B., Kauerauf, T., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 652 KB

english, 2009

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